epitaxy是什么意思 epitaxy怎么读
英式：['epɪˌtæksɪ]
美式：['epɪˌtæksɪ]
epitaxy单词基本解析：
n.（晶体）取向附生，外延附生n. [物]外延, 晶体取向附生, 晶体取向接长
n.（晶体）取向附生，外延附生；
epitaxy变化用词：
复数:epitaxies;名词复数: epitaxies |
复数：epitaxies
epitaxy英英释义：
Noun1. growing a crystal layer of one mineral on the crystal base of another mineral in such a manner that its crystalline orientation is the same as that of the substrate
名词 epitaxy:
growing a crystal layer of one mineral on the crystal base of another mineral in such a manner that its crystalline orientation is the same as that of the substrate
epitaxy[ 'epitæksi ]n.growing a crystal layer of one mineral on the crystal base of another mineral in such a manner that its crystalline orientation is the same as that of the substrate
epitaxy中文词源：
epitaxy用法和例句：
The higher value is comparable to those obtained in CVD epitaxy.
这个高的数值可以和从化学气相淀积外延得到的数值相比拟.
辞典例句
The environmental morals have their intension, the epitaxy and main content.
环境道德有其内涵 、 外延和主要内容.
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Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate.
在半导体器件制造的外延工艺中,外延生长时通常要掺入杂质.
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BaTiO 3 ( BTO ) ferroelectric thin films were deposited directly on Si ( 100 ) single crystal substrates with laser molecular beam epitaxy ( LMBE ).
利用激光分子束外延(LMBE ) 方法在Si ( 100 ) 基片上直接生长BaTiO3 ( BTO ) 铁电薄膜.
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The crystal growth by glow discharge sputterings and ion beam sputterings and thecrystal epitaxy are introduced.
介绍了气相中晶体生长的方法,如辉光放电溅射法和离子束溅射沉积法以及晶体外延生长的方法.
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High quality GaN film was grown by hydride vapor phase epitaxy ( HVPE ) using porous AAO as mask.
采用均匀的多孔阳极氧化铝做掩膜在氢化物气相外延设备中生长出高质量的氮化镓膜.
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epitaxy
Sticking Coefficient of As in molecular beam epitaxy of HgCdTe [J].
As在HgCdTe分子束外延中的表面粘附系数.红外与毫米波学报);
Liquid Phase Epitaxy (LPE) of CaAs-Ca_(1-x) Al_x As Double Heterostructure (DH) Lasers
GaAs-Ga_(1-x)AI_xAs双异质结激光器的液相外延
Growth and P-type Doping Property of GaN by RF Plasma Molecular Beam Epitaxy
GaN材料的射频等离子体分子束外延生长及其掺杂特性研究
Design and making of hydride vapor phase epitaxy system for growing GaN
GaN氢化物气相外延生长系统的设计与制作
Hydride Vapor Phase Epitaxy (HVPE)
HVPE
LIQUID PHASE EPITAXY OF InSb_(1-x)Bi_x
InSb_(1-x)Bi_x的液相外延
Quantitative Auger Electron Spectroscopy Analysis of In_xGa_(1-x)As Grown by Molecular Beam Epitaxy
In_xGa_(1-x)As的俄歇电子谱定量分析
Molecular beam epitaxy and micro-structural characterizations for PbSe single crystal films
PbSe单晶薄膜的分子束外延及其表面微结构
A Study on Intrinsic Silicon Epitaxy by UHV/CVD
UHV/CVD生长本征硅外延层的研究
OPTICAL PROPERTY AND BISTABILITY OF CdS EPILAYERS GROWN BY VAPOUR PHASE EPITAXY
VPE生长CdS外延膜的光学性质与光学双稳态
X-ray Analysis of GaN Film Grown by Hydride Vapor Phase Epitaxy
X射线分析氢化物汽相外延法生长GaN薄膜
epitaxy mechanism
[化] 取向机制
liquid phase epitaxy (LPE)
[化] 液相处延
low-temperature epitaxy
[计] 低温生长
To compare with other kinds of fabrication technology, like ion implantation and solid-state epitaxy, our of manufacturing technology is simple and low cost of.
与离子布值、固相磊晶和其他技术做比较，我们的制造技术简单且低成本。
In order to get strain from the channel, by process, deposit Si3N4 at NMOS and adopt the silicon-germanium epitaxy on source/drain by PMOS, can effective improve NMOS and PMOS electronic characteristic.
中文摘要近年来，为了提升金氧半场效电晶体工作频率及性能，尺寸不断微缩，让相同面积晶片可以拥有更多的电晶体数量。
secondary epitaxy
二次外延
The crystal growth by glow discharge sputterings and ion beam sputterings and thecrystal epitaxy are introduced.
介绍了气相中晶体生长的方法,如辉光放电溅射法和离子束溅射沉积法以及晶体外延生长的方法。
The applications of the photoassisted epitaxy in the epitaxial growth of semiconductors are introduced,such as temperature decrease,doping control,atomic layer epitaxy and the selective epitaxy.
介绍其在半导体材料外延生长中的具体应用，包括降低温度、掺杂控制、原子层外延和选择性外延；
Single Layer Growth of Strained Epitaxy at Low Temperature
低温下应变外延层的单层生长
low temperature epitaxy
低温外延
Keywords catalytic combustion;palladium catalyst;epitaxy;thermal analysis;
催化燃烧;钯催化剂;取向附生;热分析;
Podium was an OEM of epitaxy wafer growth and chip processing for both nationally and internationally renowned electronic manufacturers.
公司成立初期，主要为国内外知名半导体厂商生产外延片及芯片。
The Company: South Epitaxy Corporation (SEC) founded in March 2000, is dedicated to be the best compound semiconductor epi-wafer manufacturer in the world.
公司：元砷光电科技股份有限公司（SEC）成立于2000年3月，立志成为全世界最优秀的化合物半导体磊晶片制造商。
Keywords molecular beam epitaxy;quantum dot;quantum well;spin relaxation;Gallium Arsenide;Aluminum Gallium Arsenide;inverse spin Hall effect;
关键词分子束外延;量子点;量子阱;自旋驰豫;砷化镓;砷化铝镓;自旋霍尔逆效应;
Keywords ferroelectric thin film;strain;growth mode;laser molecular beam epitaxy;reflected high energy electron diffraction;
关键词铁电薄膜;应变;生长模式;激光分子束外延;反射高能电子衍射;
The growth processes of liquid-phase epitaxy will be discussed in some detail, as crystal growth is a necessary step for the realization of integrated optics using.
再略为详细地讨论液相外延生长过程，因为晶体生长是实现集成光路使用的必不可少的一个环节。
MBE (molecular beam epitaxy)
分子束外延
Keywords molecular beam epitaxy;heterojunctions;tilt angles;
分子束外延;异质结;倾斜角;
Keywords molecular beam epitaxy, antimonide, mid-infrared, laser diode, photodetector;
分子束外延;锑化物;中红外;激光器;探测器;
Keywords molecular beam epitaxy;antimonide;mid-infrared;lasers;sulfur passivation;
分子束外延;锑化物;中红外;激光器;探测器;硫钝化;
Abnormal Raman spectra of PbTe crystalline thin films grown by molecular beam epitaxy
分子束外延PbTe单晶薄膜的反常拉曼光谱研究
A DC ELECTROLUMINESCENT CELL Au/ZnSe:Mn/n-Ge PREPARED BY MO-LECULAR BEAM EPITAXY
分子束外延法生长的Au/ZnSe:Mn/n-Ge直流电致发光单晶膜
Ptical and electrical characterizations of ZnSe self-organized quantum dots grown by molecular beam epitaxy
分子束外延生长ZnSe自组织量子点光、电行为研究
Molecular beam epitaxy (MBE) is an ultra-high-vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control.
分子束外延（Molecular beam epitaxy, MBE）是一种在超高真空条件下，使分子或原子按晶体排列一层层地“长”在基片上形成薄膜的技术。
Raman spectra and Photoluminescence spectra are used to investigate the influence of carbon doping on the structural and optical properties of GaN films grown by the hydride vapor phase epitaxy (HVPE).
利用喇曼光谱和光致发光谱 ,对采用氢化气相外延淀积方法在MOCVDGaN衬底上生长的掺碳GaN样品的光学性质进行了研究 .
BaTiO3(BTO)ferroelectric thin films were deposited directly on Si(100) single crystal substrates with laser molecular beam epitaxy(LMBE).
利用激光分子束外延(LMBE)方法在Si(100)基片上直接生长BaTiO3(BTO)铁电薄膜。
SrTiO3(STO), BaTiO3(BTO) and Ba0.6Sro. 4TiO3(BST)ferroelectric thin films were grown epitaxilly on SrTiO3(100) single crystal substrates by the laser molecular beam epitaxy(LMBE) method.
利用激光分子束外延技术(LMBE)在SrTiO3(100)单晶基片上外延生长SrTiO3(STO)、BaTiO3(BTO)、Ba0.6Sr0.4TiO3(BST)铁电薄膜.
Mg contents of Zn_ 1-x Mg_xO film grown on A_sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method.
利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的Mg组分进行了测试.
graphic epitaxy
制图外延法
Keywords Compound Semiconductor, Molecular Beam Epitaxy, Heterojunction,,,, Bipolar Transistor, Solar Cell;
化合物半导体;分子束外延;异质结双极晶体管;太阳电池;
Semiconductor/Superlattice Distributed Bragg Reflector Grown by Molecular Beam Epitaxy
半导体/超晶格分布布拉格反射镜(DBR)的分子束外延生长
semiconductor epitaxy
半导体外延
Calculation of the Lattice Mismatch Between Semiconductor Epitaxy and Substrate
半导体外延层晶格失配度的计算
atomic layer epitaxy
原子层外延
double epitaxy
双外延工艺
temperature-change epitaxy
变温外延
Variable Temperature Scanning Tunneling Microscopy-Molecular Beam Epitaxy System
变温扫描隧道显微镜-分子束外延系统
Solid source molecular beam epitaxy
固源分子束外延
solid epitaxy
固相外延
Vapor Phase Epitaxy of Hg_(1-x)Cd_xTe on CdTe substrates
在CdTe衬底上汽相外延Hg_(1-x)Cd_xTe
Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate.
在半导体器件制造的外延工艺中，外延生长时通常要掺入杂质。
GaAs FILM GROWN ON CONDUCTING GLASS BY HOT WALL EPITAXY
在导电玻璃衬底上热壁外延生长GaAs薄膜
Epitaxy structure of wafers
外延片结构
epitaxy growth
外延生长
epitaxy defect
外延缺陷
Epitaxy of Thin Diamond Film with Large-area Monocrystalline
大尺寸单晶金刚石薄膜的外延生长
Solar cell;Molecular beam epitaxy (MBE);CuInSe/sub 2/;Indium tin oxide (ITO);Electrodeposition
太阳电池;分子束磊晶;二硒化铜铟;铟锡氧化物;电极沈积
The impurity concentration profile depends on epitaxy growth velocity, growth time and impurity diffusion coefficient.
如果杂质的扩散系数很小，杂质在外延层中的深度分布是均匀的。
For red LEDs, the AlGaInP epitaxy layer are commonly grown on GaAs substrate (sub.) for lattice constant matching requirement.
对红色发光二极体(LED)而言，由于晶格常数之要求，通常将发光材料磷化铝铟镓成长于砷化镓基板上。
local epitaxy
局部外延
Differential epitaxy
差分外延
Atmospheric pressure epitaxy
常压外延
Keywords dry etching;ion implantation;photoluminescence;gas source molecular beam epitaxy;quantum well;
干法刻蚀;离子注入;光致发光;气态源分子束外延;量子阱;
Epitaxy delta
延边三角形
Wavelength Modulation of InP-based Materials by Use of Narrow-stripe Selective Metallorganic Chemistry Vapour Epitaxy[J].
引用该论文 张瑞英,董杰,周帆,李国华,边静,冯志伟,王圩.
Cr3+-Activated YAG Monocrystalline Luminescent Layers Grown by Liquid Phase Epitaxy[J].
引用该论文 饶海波,成建波,黄宗琳,李军建,方官久.
In particular, she has pioneered the use of molecular beam epitaxy (MBE) technology in China.
惊诧于这样的人还不是中国的院士，实在很烦。
We have grown PbTe films on Si(111) and Si (100) substrates by using Hot Wall Epitaxy (HWE) technology.
我们采用热壁外延(Hot Wall Epitaxy，缩写为HWE)技术,在Si(111)和Si(100)衬底上外延生长PbTe薄膜。
I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments.
我将介绍分子束磊晶技术（ MBE ）的发明经过、现况、和将来的发展。
In this dissertation, we studied the growth of Sb-containing compound semiconductor materials and devices by using solid source molecular beam epitaxy (SSMBE).
摘要:本篇论文中研究以固态源分子束磊晶法成长含锑化合物半导体材料与元件。
Over-expanding connotation and ambiguous epitaxy are the main problems of Chinese medical history and literature science.
摘要中医医史文献学科目前存在内涵过大，外延不明确；
Keywords Lattice strain;Superlattice;Pulsed laser molecular beam epitaxy;RHEED;
晶格应变;超晶格;脉冲激光分子束外延;反射式高能电子衍射;
Finally, we present the lasing properties of InAs/GaAs QD lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy.
最后我们使用固态分子束磊晶器，以砷化铟/砷化镓量子点作为活性层，磷化铟镓作为被覆层制作半导体雷射并量测其特性。
organic molecular beam epitaxy
有机分子束外延
TECHNIQUE AND RESERARCH PROGRESS OF ORGANIC MOLECULAR BEAM EPITAXY
有机分子束外延技术与研究进展
metallo organic vapor phase epitaxy
有机金属汽相外延
The microstructure of BaTiO 3 (BTO)/ SrTiO 3 (STO) superlattice grown on (001)SrTiO 3 substrate by laser molecular beam epitaxy (L MBE) was investigated.
本实验研究利用激光分子束外延法 (L%DMBE)研究在SrTiO3(STO) (0 0 1)基片上生长的BaTiO3(BTO) /SrTiO3(STO)超晶格的微结构 .
According to the “modified” complementary error function, the impurity concentration profiles were drawn at different diffusion coefficient, epitaxy growth velocity and growth time.
本文从理论上推导出掺杂外延生长时杂质浓度深度分布表达式；
We review the self-assembly of functional molecules on metal substrates based on density functional theory using ab initio calculations and ultrahigh vacuum molecular beam epitaxy technique.
本文在基于密度泛函的第一性原理计算的基础上，对功能分子在金属表面上的自组装特性等进行了综述。
用作名词(n.)The higher value is comparable to those obtained in CVD epitaxy.
这个高的数值可以和从化学气相淀积外延得到的数值相比拟。
The impurity concentration profile depends on epitaxy growth velocity, growth time and impurity diffusion coefficient.
如果杂质的扩散系数很小，杂质在外延层中的深度分布是均匀的。