nitride是什么意思   nitride怎么读

nitride单词基本解析：

nitride变化用词：

nitride英英释义：

1. a compound containing nitrogen and a more electropositive element (such as phosphorus or a metal)

名词 nitride:

a compound containing nitrogen and a more electropositive element (such as phosphorus or a metal)nitride[ 'naitraid ]n.a compound containing nitrogen and a more electropositive element (such as phosphorus or a metal)

nitride中文词源：

nitride用法和例句：

The nitride on oxide layers remains intact.

氧化物表层上面的氮化物保持原状不动.

辞典例句

Environmental catalytic material of iron nitride nanoparticle was synthesized by Benzene - thermal method.

采用苯热法合成环境催化材料纳米氮化铁.

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Chromium nitride is produced in much the same way.

氮化铬也是以相同的过程形成的.

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Boron carbon nitride ( BCN ) thin films were deposited by radio frequency ( RF ) magnetron sputtering .

采用射频 磁控溅射 技术制备出硼碳氮 ( BCN ) 薄膜.

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The surface coating of titanium coating coating, coating, nitriding, chromium nitride coating.

本色, 镀钛涂层, 氮化涂层, 氮化铬涂层.

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All candidates are now mounted between silicon nitride windows by default.

所有的候选者通常情况下都安放在氮化硅窗体中.

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This is because of the impurity nitride ( MmNn ) in glass.

本文认为这是玻璃内部所含的杂质氮化物 ( MmNn ) 所致.

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Silicon Nitride is anti - magnetic and resistant to corrosion by most substances.

氮化硅是一种 反 磁性和耐腐蚀大多数物质.

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The picokeystone is trapped between the two silicon nitride windows.

小楔块儿陷于两个氮化硅窗体中间.

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In this way, high - performance porous silicon nitride was obtained.

以此获得高性能的多孔氮化硅材料.

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Silicon nitride is a kind of excellent ceramic material.

氮化硅是优良的陶瓷材料,应用广泛.

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Jelenski, A . " Gallium Nitride - New Material for Microwave and Optoelectronics . "

氮化镓 - 微波与 光电元件 的新材料.

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Alternative cubic boron nitride cutting tools.

替代立方氮化硼刀具.

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All - steel heating cup and silicon nitride heating system.

⊙全铜发热杯及氮化硅加热系统.

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We have a production line of organic chloride, silicide, nitride compounds and etc.

目前产品以有机卤化物 、 有机硅化物 、 氮化物系列产品为主.

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nitride

Jelenski, A."Gallium Nitride - New Material for Microwave and Optoelectronics.

"氮化镓-微波与光电元件的新材料.

In the late 1980s Isamu Akasaki and his colleagues at Nagoya University created the first p-type gallium nitride by incorporating tiny amounts of magnesium.

20世纪80年代后叶Akasaki和他的同事们在名古屋大学通过添加少许镁制造出首例p型氮化镓。

The first P-type covering layer (61) which composed of P-type nitride semiconductor containing indium and gallium sets contacting with one side of the active layer.

一个由含铝和镓的P型氮化物半导体构成的第一P型覆盖层(61)被设置与有源层的一个面接触。

My investigation will focus on cobalt doped gallium nitride nanowires with their structure influencing and magnetic nature.

一维奈米材料在过去的研究往往集中在其特殊的光学性质以及电学性质上，鲜少有关于磁性方面的深入研究。

In this study, indium nitride nanowire was successfully grown by MOCVD system.Structure studied by x-ray diffraction (XRD) spectra and Raman spectrometer.

一维奈米结构是能有效率的传输电子的最小尺度，也因此是理想中适合奈米尺度系统如此极端及多样化的工作环境。

The first, wurtzite boron nitride has a similar structure to diamond, but is made up of different atoms.

上海交通大学的潘自成(音译)及其同事进行了一次模拟实验，模拟两种据信为高硬度物质的原子如何对尖头探测器施加的压力作出反应。

Koya S, Yutaka W. Jointing Nitride Ceramics[P]. JP: 07011305, 1995-10-16.

专利专利所有者．题名（正体，实词首字母大写）[P]．国别：专利号，出版日期

In order to improve impressibility of the oil for antioxidant, it should be down that increasing refining extent, deeper removing aromatics, colloid, and nitride and decreasing sulfide content.

为提高汽轮机油基础油对抗氧剂的感受性,应提高精制深度,深度脱除芳烃、胶质及氮化物,降低硫化物的含量。

In order to develop new generation monolayer brazing CBN (cubic boron nitride) grinding wheels, two types of active filler alloys (Ni Cr and Ag Cu Ti) were tested in vacuum furnace.

为研制我国新一代单层钎焊CBN(立方氮化硼 )磨料砂轮 ,尝试Ni-Cr和Ag -Cu-Ti两种活性钎料 ,在真空炉中钎焊。

Main composition:Natural plant fair, Wei E, Cape Sha alkane, gel 50, the Boron Nitride, pore accept a tight, vitamin C.

主要成份：天然植物美白剂、维E、角鲨烷、凝胶50，氮化硼、毛孔收紧剂、维他命C。

This paper has a simple introduction on the metal bonds and the composites of metal and superhard materials (diamond and cubic boron nitride).

主要时常用的金属结合剂和金属复合超硬材料（金刚石、立方氮化硼）材料做了简单的介绍和描述。

This paper described the design mind and support technology and system principle of the control protection system of nuclear criticality safety experiment facility for nitride uranium solution.

主要阐述了铀溶液核临界安全实验装置控制保护系统的设计思想、保障技术和系统原理。

At present, our company mainly produces ceramic balls, ceramic bearings and ceramic rings which are made of silicon nitride, zirconia or alumina.

产品包括陶瓷球、陶瓷轴承、陶瓷刀杯环、陶瓷结构件四大类领域。

The cutting performances,the choices of machining parameters and the uses of silicon nitride ceramics cutting tools are introduced.

介绍了氮化硅陶瓷刀具的切削性能、切削用量的选择及其应用。

The making method for the galvanized honing head as well as the application of artificial diamond and cubic boron nitride on the honing head are introduced.

介绍了电镀珩具的制作方法及人造金刚石和立方氮化硼磨粒在电镀珩具上的应用。

Using the high-energy mechanochemistry ball mill of self-designing,the micro/nanoneter molybdenum nitride powder are prepared through the ball-mill reaction of molybdenum and ammonia.

从机理上进一步进行了探讨,并给出了微纳米氮化钼形成的机理模型。

They parted for Yang, who peered into the eyepiece to witness a brilliant blue-violet flash emanating from a glassy chip of gallium nitride (GaN).

他们让了个位子给杨祖佑，他透过目镜，目睹了一片光滑的氮化镓（GaN）放射出亮丽的蓝紫色光芒。

Paradoxically, wurtzite boron nitride's hardness appears to come from the flexibility of the bonds between the atoms that make it up.

令人意想不到的是，纤锌矿型氮化硼的惊人硬度居然源自原子间富于弹性的键。

Formation, structure and phase transition of BCN compound were investigated by mechanical milling of mixture of graphite and hexagonal boron nitride or annealing the as-milled mixture at high temperature and high pressure.

以石墨和六方氮化硼(h-BN)粉为原料,利用高能机械球磨和高温高压技术对BCN化合物的形成、结构及相变进行了研究.

In an encouraging sign for carbon electronics, the highly mobile positive charges even outpaced the electrons in the semiconductors silicon carbide and gallium nitride.

任职于瑞典乌普沙拉大学的本计画主持人艾斯伯格认为，大致上来说，更高的迁移速率，意谓著在半导体元件中更少的能量损失以及更快的切换时间。

High quality nitride or chrome plated alloy screw with a nitrogen-treated barrel provides anti-corrosion with high wear resistance for an extended working life.

优质合金氮化或镀铬螺杆，氮化料筒，具有耐腐蚀、耐磨损、使用寿命特长等优点。

Boron nitride (BN) thin films were deposited on Si substrates using the conventional radio-frequency (RF) sputtering system, with hexagonal boron nitride (hBN) target and working gas of argon (or mixture of nitrogen and argon).

使用射频溅射(RF)系统,靶材为烧结的六角氮化硼(hBN),工作气体为氩气(或氩气和氮气的混合气),在硅衬底上沉积氮化硼薄膜。

One phage is specific for the semiconductor gallium arsenide and is insensitive to its close cousin gallium nitride, giving it a power of discrimination that might allow it to detect flaws in chips.

例如有一种病毒就对砷化镓半导体具有专一性，但对其近亲氮化镓却毫无反应，这种辨识力或许可用来侦测晶片的瑕疵。

The separation and examination of phrrolic nitrogen compounds in petroleum is realized by the Separation and Test Technique of the nitride.

储层油水层划分技术开发出了判别油水层技术;

Some problems such as low cetane value and poor storage stability occur because catalytic cracking diesel oil contains sulfide, nitride and hydrocarbon, etc.

催化裂化柴油因含有含硫化合物、含氮化合物和芳烃等,存在着十六烷值较低、贮存安定性差等问题,需要对催化裂化柴油改质处理。

All imported (Austria), cobalt high-speed steel. Co-Steel after titanium nitride coating materials, the best use of state properties.

全部采用进口（奥地利）钴高速钢。钴高速钢材料经过氮化钛镀层，达到最佳使用性能状态。

To overcome this problem, the conductive poly-Si is replaced by discrete trapping nitride to form the [poly-Si or metal gate]-SiO2-SiN-SiO2-Si SONOS or MONOS memory.

其主要原因为反覆的编码和抹除过程将会对穿遂氧化层造成应力而产生缺陷，这些缺陷可能形成漏电路径而导致多晶矽全面性的漏电。

Write low ( Metal Nitride Oxide Semiconductor FET)

写入低态(氮化金属氧化半导体场效应管)

Write high ( Metal Nitride Oxide Semiconductor FET)

写入高态(氮化金属氧化半导体场效应管)

Analyze the damaged mechanism on ceramic cup and the development of c eramic cup refractory. Emphasis on summarize the research actualities on corundu m-silicon nitride composites.

分析了陶瓷杯的损毁机理及陶瓷杯耐火材料的发展。重点总结了目前刚玉-氮化硅复合耐火材料的研究现状。

X-ray diffraction (XRD) measurements reveal formation of titanium nitride in the astreated sample.

利用X射线衍射仪(XRD)对氮化处理后的样品刚试，得到了样品的相结构。

This paper describes the study on the component and structure of the silicon oxide and silicon nitride films by infra-red absorbed spectrum.

利用红外吸收谱等微观分析对氧化硅和氨化硅薄膜的成分和结构进行了研究。

The groups from U.C.S.B. and Rohm are developing a new way to grow the crystalline layers of gallium nitride and related alloys that make up a laser diode.

加州大学圣巴巴拉分校和罗姆公司的研究团队正在开发新技术，以制作氮化镓结晶层以及构成雷射二极体的相关合金。

In this study, gallium nitride nanowires were successfully grown on Silicon substrate using a simple resistive heated furnace, APCVD system, at room temperature.

发现在氮化镓材料上具有室温铁磁性的性质，被预期能运用在磁性记忆体的元件和积体电路的材料上。

Because the atomic lattice structure of gallium nitride is better matched to sapphire than it is to silicon, making LEDs on silicon without distortions has proved extremely tricky.

同硅相比，氮化镓的原子晶格结构与蓝宝石更加匹配，因此在硅材料上生产LED而保持不变形，相当棘手。

Comparative study on nitride and phosphide .

因此，较大的还原气空速易于形成较高的催化剂比表面积。

"At low applied forces, the hardness of rhenium diboride is equivalent to cubic boron nitride, the second-hardest material known, Kaner said.

在低作用力下，二硼化铼的硬度与立方结构的氮化硼相等，而氮化硼是第二硬的材料。

Under insufficient lubrication conditions there is no smearing between silicon nitride and steel.

在润滑不充分的条件下,氮化硅和钢之间不会发生沾污。

It is also used as the etchant for etching Aluminum and Silicon Nitride film in semi-silicon IC.

在硅平面晶圆集成电路生产中，用于铝及氮化硅的蚀刻；

A Novel pH Electrode Based on Titanium Nitride

基于氮化钛的全固态碱性pH电极的研制

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存在或者实验室制造的纤锌矿型氮化硼和朗斯代尔石数量很少，直到现在，也没有一个人发现它们令人吃惊的硬度。

Solar photons would pass right through the silicon nitride in each flier, but the ones passing through the holes in the flier would come out slightly ahead.

太阳光子会通过矽化氮碟盘，但是那些通过孔洞的光子，会比没有通过孔洞的光子稍微前进一点，因此这两组光子会互相干涉抵消，造成遮蔽阳光的效果。

It consists of fine elongated grains of beta-silicon nitride in a glassy phase matrix.

它是由位于玻璃相基中的贝塔氮化硅细长晶粒构成。

Its comprehensive coverage focuses on aluminum nitride substrates.

它的广泛报导集中在铝氮化物基体。

From X-ray photoelectron spectroscopy (XPS) experiments, the presence of Si clusters in the silicon nitride films was confirmed.

对不同富矽量的氮化矽薄膜做了红外和光致发光的比较研究。

The maximum x-directional strain of NMOS channel is 0.6% when the model is gave 1GP of the intrinsic stress of the silicon nitride capping layer under a temperature loading of -400K.

对于奈米结构而言，本研究所建立之模拟方式可详尽探讨弯矩对应变矽之力学行为，并可依此对NMOS元件进行分析与设计。

Research on gallium nitride, a material that showed promise for blue LEDs, began in the late 1960s at the Radio Corporation of America (RCA), which wanted to use LEDs to create flat-panel televisions.

对于氮化镓的研究由美国无线电公司（RCA）于20世纪60年代开始，他们想利用LED做平面电视机，这种材料给蓝色LED带来生机。

XRD and AES profiles show that the Ti nitride coats on the matrix after N-ion implantation plays an important role in inhibiting corrosion of specimen.

射线衍射与AES分析发现材料表面形成钛的氮化物膜层,其机械隔离与化学效应抑制了腐蚀.

RF Plasma System 9200 is a barrel-type batch stripping system with optional high temperature capabilities for photoresist removal, nitride etch, and other cleaning applications in semiconductor and MEMS fabs.

射频等离子体9200是桶式炉脱模体,拥有可控制的高温系统可去除光阻材料、氮化物蚀刻和半导体与微型机电系统等方面的清洗功能.

CBN(cubic boron nitride) grits surface were processed with sensitizing solution and activating solutions.

将立方氮化硼(CBN)磨料依次浸泡于敏化液和活化液中,进行表面活化处理。

The picokeystone is trapped between the two silicon nitride windows.

小楔块儿陷于两个氮化硅窗体中间。

The study on relationship between reaction circumstances -composition-properties of (carbon) silicon (oxy)nitride home and abroad was reviewed in this article.

就氮(碳/氧)化硅薄膜的反应条件-组成和结构-性能之间关系的国内外研究进行了综述。

The common ceramic used for SKF bearing rings and rolling elements is a bearing grade silicon nitride material.

常用于SKF轴承套圈和滚动体的陶瓷材料是轴承级的氮化硅材料。

Simulations of surface nitridation and nitride precipitation in alloy steels have beeb carried out with cellular automaton modeling.

应用元胞自动机模型对合金钢表面氮化及扩散层中氮化物沉淀过程进行了计算机模拟。

Synthesis and VioletLuminescence Mechanism of Hexagonal Monocrystal Aluminum Nitride Films[J].

引用该论文 吕惠民,陈光德,耶红刚,颜国君.

Many companies use Aluminum Nitride(ALN) material to thermally dissipate heat out of the Laser.

很多公司都运用氮化铝材料驱散激光器的热量。

It is pointed out that the rare earths accelerate the diffusion of carbon and nitrogen atoms, and the formation of nitride, carbide and carbonitride through direct and indirect actions.

指出稀土是通过直接和间接作用来加速氮、碳的扩散与氮、碳化物的形成。

Because of the applications in UV-Blue light emitting devices, gallium nitride materials have drawn much attention.

摘要:氮化镓材料因其在蓝紫外光发光元件上的应用而广受各界注意。

There are three types of photoexcitation-photoemission processes for electron-holes in the photoluminescence from silicon-rich silicon nitride thin films.

摘要对于富纳米硅氮化硅薄膜的光致发光，其电子-空穴对存在3类光激发-光发射过程。

A new model of two dimensional surface states produced by a strong polarized charge on a nitride heterostructure surface is presented.

摘要提出了氮化物表面强极化电荷产生薄吸附层形成的二维表面态新模型。

A new kind of boron nitride based shell mold used for investment casting titanium alloys was fabricated and the reaction between it and Ti-Ni alloy was investigated.

摘要研究了一种新型钛合金精密铸造用型壳-氮化硼基复合型壳及其与钛镍合金的界面反应和反应层的形成机制。

Titanium nitride was obtained by the mixing technology with laser and plasma beams nitriding coaxially on the surface of titanium in atmosphere.

摘要采用激光和氮等离子体混合方法在大气气氛下对钛样品表面进行处理，获得了钛氮化合物表层。

Current research on these materials concentrates on diamond, cubic boron nitri de(cBN), carbon nitride(C 3N 4, CN x), boron carbonitride(BCN)and diamond like carbon(DLC).

新型超硬薄膜材料研究从金刚石开始 ,目前主要的研究对象有金刚石、类金刚石碳 (DLC)、立方氮化硼 (cBN)、氮化碳 (C3N4 ,CNx)、硼碳氮 (BCN)等 ,是近二十年来材料研究的热门方向之一 .

The invention relates to a manufacturing method of a titanium nitride layer as well as an apparatus thereof.

本发明涉及一种氮化钛层的制造方法及其装置。

In this paper, a quantitative friction measurement technique is introduced.The friction coefficients between a silicon tip and titanium nitride and diamond-like-carbon films have been obtained.

本文介绍定量摩擦力测量技术，并测量矽探针与氮化钛及类钻碳两种硬膜的摩擦系数。

The thermal conductivity and secondary-phase aluminates of aluminum nitride with different sintering aids of rare-earth oxides Sm-2O-3? Dy-2O-3? Sm-2O-3-Dy-2O-3 are studied from the viewpoint of microcryogenics.

本文从低温微结构工程学的观点 ,比较AlN中加入Sm2 O3、Dy2 O3、Sm2 O3 Dy2 O3稀土烧结助剂的热导率、第二相铝酸盐的变化 ,探讨了铝空位和氧影响AlN的热导性 .

The composite material(BNf-SiO_2)was made by adding boron nitride fiber into the basalsilica. The thermal expansion characteristics of the composite material(BNf-SiO_2)are studiedin this paper.

本文对石英基体内添加氮化硼纤维制成的复合材料(BNf-SiO_2)的热膨胀特性进行了研究.

This Letter reports the nitriding of ferromolybdenum to formmolybdenum and iron nitride,iron nitride is leached in dilute hydrochforicacid.

本文综述了关于把钼铁氮化而形成钼和铁的氮化物，并且把后者浸出到稀盐酸中的问题。

This is because of the impurity nitride(MmNn) in glass.

本文认为这是玻璃内部所含的杂质氮化物(MmNn)所致。

Here, in the light of the theories of both magnetism and heat - power, a detailed analysis on the effect of the magnetic field in the course of nitride hardening is done.

本文运用磁性理论和热力学理论对磁场在氮化过程中的影响进行较详细的理论分析。

This is a new generation of coating in which contains multi-layer structure and nano-scale nitride providing a super-hard surface to resist wearing and scratching.

此崭新的涂层结合纳米氮化物及多层膜技术，能提供超高表面硬度而减低磨损及刮痕情况，非常适合在刀具上应用。

The simulation showed that wurtzide boron nitride would withstand 18% more stress than diamond, and lonsdaleite 58% more.

此次模拟实验显示，纤锌矿型氮化硼的抗压能力比钻石高18%，朗斯代尔石则高出58%。

The nitride on oxide layers remains intact.

氧化物表层上面的氮化物保持原状不动。

More nitride need be added to obtain the same flame retardant effect as the other have.

氮化物需加入较多的用量才能获得同样的阻燃效果;

Rolling elements of silicon nitride

氮化硅滚动体

Silicon Nitride balls are a popular choice for bearing designers and other high precision product applications Long life makes this material very suitable for aviation applications.

氮化硅球是一个受欢迎的选择，轴承设计师及其他高精密产品应用寿命长，使这种材料非常适合航空应用。

Silicon Nitride Ceramic Heating Element

氮化硅电热点火器

Silicon nitride has a higher hardness and higher modulus of elasticity than steel, resulting in increased bearing stiffness and longer bearing service life in contaminated environments.

氮化硅的硬度和弹性模量均高于钢,因此在受污染的环境中,轴承有较好的刚度和较长的使用寿命。

Silicon nitride ceram is widely used as a high-temperature structural material and is one of the most promising materials.

氮化硅陶瓷广泛用作高温结构材料，是很有前途的陶瓷材料之一。

Since ceramics of silicon nitride came out in 1950s,they have got a good deal ofattention to the wide-range application in engineering field and aviation technology.

氮化硅陶瓷材料在航空技术和工程领域中的应用前景广阔，自其在本世纪五十年代问世以来日益受到普遍关注。

The nitride on oxide layers remains intact.
氧化物表层上面的氮化物保持原状不动。

Too high of a surface temperature will result in a silicon nitride reaction.
表面温度过高容易导致硅、氮发生反应。