wurtzite是什么意思   wurtzite怎么读

wurtzite单词基本解析：

wurtzite变化用词：

wurtzite英英释义：

wurtzite中文词源：

wurtzite用法和例句：

wurtzite

Investigation on the broadening of band gap of wurtzite ZnO by Mg-doping

Mg掺杂ZnO所致的禁带宽度增大现象研究

S doped wurtzite ZnO

S掺杂纤锌矿ZnO

Wurtzite ZnO is a wide-bandgap semiconductor, whose band-gap energy is 3.37eV at room temperature and exciton binding energy is 60meV.

ZnO的室温禁带宽度为3.37eV，激子束缚能为60meV，具备实现室温的紫外受激辐射的条件，因此已经成为紫外光电子材料和器件研究领域的热点之一。

The first, wurtzite boron nitride has a similar structure to diamond, but is made up of different atoms.

上海交通大学的潘自成(音译)及其同事进行了一次模拟实验，模拟两种据信为高硬度物质的原子如何对尖头探测器施加的压力作出反应。

Paradoxically, wurtzite boron nitride's hardness appears to come from the flexibility of the bonds between the atoms that make it up.

令人意想不到的是，纤锌矿型氮化硼的惊人硬度居然源自原子间富于弹性的键。

Wurtzite boron nitdde(w-BN)

六角结构氮化硼

Phase transition of nano ZnS from wurtzite to rocksalt occurred at 16.0 GPa and 16.7 GPa for 10 nm and 3 nm sample,respectively,which were higher than that of the bulk materials.

初始相为纤锌矿结构的10 nm和3 nm硫化锌分别在16.0 GPa和16.7 GPa时转变为岩盐矿结构,相变压力均高于纤锌矿结构的体材料硫化锌。

Keywords semiconductor;gallium nitride;crystal;nanostructure;hexagonal wurtzite;film;

半导体;氮化镓;晶体;纳米结构;六方纤锌矿结构;薄膜;

Influence of Uniaxial Anisotropy on Binding Energies of Shallow Impurity States in Wurtzite Nitrides

单轴异性对氮化物半导体中浅杂质态的影响

With increasing pressure,the wurtzite structre was transformed to zinc blende structure at 11.2 GPa.

压力达到11.2 gpa时,纳米硫化锌空心球中的纤锌矿结构全部转变为闪锌矿结构。

XRD and TEM measurements indicate that the ZnO nanostructure is made of the single-crystal with wurtzite structure.For the nanosaws, the PL spectra were measured at room temperature.

在锯齿状的氧化锌奈米结构研究中，我们以X光绕射,电子显微镜，以及拉曼光谱确定其为纤锌矿结构的氧化锌。

Energy levels of a polaron in wurtzite nitride parabolic quantum well under external electric field

外电场作用下纤锌矿氮化物抛物量子阱中极化子能级

Only small amounts of wurtzite boron nitride and lonsdaleite exist naturally or have been made in the lab so until now no one had realised their superior strength.

天然存在或者实验室制造的纤锌矿型氮化硼和朗斯代尔石数量很少，直到现在，也没有一个人发现它们令人吃惊的硬度。

The result of the XRD indicated that the production structure was wurtzite,which was mixed with hydrocarbon.

射线衍射结果表明,掺入了碳氢化合物的反应产物的晶须属六方纤锌矿结构。

The result of the XRD indicated that the production structure was wurtzite, which was mixed with hydrocarbon.

射线衍射结果表明，掺入了碳氢化合物的反应产物的晶须属六方纤锌矿结构。

Keywords wurtzite type structure;bond orbital approximation;tight-binding mathod;lattice dynamics;Raman spectrum;

成键轨道近似;紧束缚方法;晶格动力学;拉曼谱;

Study of electron transport properties for wurtzite GaN and ZnO with full band Monte Carlo simulation

方法模拟纤锌矿相GaN和ZnO材料的电子输运特性

Studies on the Determination of the Particle's Final States in Simulation of Wurtzite GaN by Full Band Monte Carlo Method

模拟纤锌矿GaN材料中粒子最终态的确定

Indium nitride (InN), with its wurtzite crystal structure and 0.7 eV direct band gap, is a promising III-V compound semiconductor for high-frequency and high-speed devices and optical communication.

氮化铟材料拥有0.7电子伏特的直接能隙，被预期能运用在高频高速的元件和光通讯的材料上。

However, as a covalent chemical compound with the wurtzite crystal structure, A1N is not easy to sinter.

然而，A1N是强共价键化合物，烧结活性低，而且A1N很容易水解引入氧杂质。

Comparison Between Three-Valley Model and Full Band Model in Monte Carlo Simulation of Bulk Wurtzite GaN

用三带和全带模型蒙特卡罗方法模拟纤锌矿相GaN体材料输运特性结果的比较

Wurtzite structure semiconductors, such as CdSe, exhibit strong electric dipole moment along its c-axis.It is proposed that quantum dot can be aligned along the applied field with sufficient strength.

第一种方式是先将参杂量子点样品之高分子混合腊之溶液以旋转涂布于已制作电极结构之盖玻片上，通以电场使诱发量子点转向而排列一致。

wurtzite type structure

纤维锌矿型构造

wurtzite boron nitride

纤维锌矿型氮化硼

Electronic Structure and Optical Properties of Wurtzite CdSe Quantum Ellipsoid

纤锌矿CdSe量子椭球的电子结构和光学性质

An Analytic Low Field Electron Mobility Model of Wurtzite GaN

纤锌矿GaN低场电子迁移率解析模型

Planar Force-constant Model for Phonons in Wurtzite GaN and AIN: Application to Hexagonal GaN/AIN Superlattices

纤锌矿GaN和AIN声子态的面间力常数模型在六角GaN/AIN超晶格中的应用(英文)

lattice of wurtzite type

纤锌矿型晶格

wurtzite BN

纤锌矿型氮化硼

wurtzite structure

纤锌矿结构

wurtzite quantum well wire

纤锌矿量子阱线

Keywords PLD;ZnO;thin film;hexagonal wurtzite structure;

薄膜;六方纤锌矿结构;

The bulk wire-like materials had the GaN wurtzite structure as characterized using X-ray diffraction.

藉改变催化剂种类等实验条件控制奈米晶体线的直径、长度、数量密度和晶体形态。

SEM micrographs revealed that the morphology of the film varied with the substrate temperature, the XRD analysis revealed that the ZnO films were wurtzite.

通过SEM观察，发现在不同衬底温度下，薄膜表面具有不同形貌特征。