epitaxial是什么意思   epitaxial怎么读

epitaxial单词基本解析：

epitaxial变化用词：

epitaxial英英释义：

epitaxial中文词源：

epitaxial用法和例句：

epitaxial

"Method of Fabricating Spherical Quantum Dots Device By Combination of Gas Condensation and Epitaxial Technique"，Pat No. 6774014 B1, March. 28, 2003, U.S.A.

"利用气态凝结并结合磊晶技术制作球形量子点元件的方法"，中华民国专利，专利号码198262，3月1日，2004。

N type and P type 4＂-6＂silicon epitaxial wafers.

4＂-6＂N型和P型各类硅外延片。

Epitaxial Layer-by-Layer Growth of BST Series Ferroelectric Thin Films at Low Temperature

BST类铁电薄膜低温外延层状生长研究

CaCu3 Ti4 O12 epitaxial thin film

CaCu3Ti4O12外延薄膜

The epitaxial relationship between Er2O3 and Si(001) substrate is as follows: Er2O3(110) // Si(001), Er2O3[001]//Si[110] or Er2O3[ 10] // Si[110].

Er2O3薄膜在Si（001）上的外延关系为Er2O3（110） // Si（001）, Er2O3 [001] // Si [110] 或者 Er2O3 [ 10] // Si[110]。

The epitaxial relationship between Er2O3 and Si(111) is Er2O3(111)//Si(111).

Er2O3薄膜在Si（111）上的外延关系为Er2O3（111）//Si（111）。

The epitaxial relationship between Er2C>3 and Si(100) substrate is as follows: Er2O3(110) // Si(100), or Er2O3(100) // Si(100).

Er_2O_3薄膜在Si(100)上的外延关系为Er_2O_3(110)//Si(100)或者Er_2O_3(100)//Si(100)。

Dynamics Conditions for Formation of Misfit Dislocation in Epitaxial FCC Films

FCC晶体外延薄膜中失配位错形成的动力学条件

Silicon on sapphire epitaxial wafers

GB/T14015-1992硅-蓝宝石外延片

La0.67Pb0.33MnO3 epitaxial film

La0.67Pb0.33MnO3外延膜

La0.75Na0.25MnO3 epitaxial fihn

La0.75Na0.25MnO3外延膜

La0.875Na0.125MnO3 epitaxial film

La0.875Na0.125MnO3外延膜

La2/3 - Pb1/3 - MnO3 epitaxial film

La2/3Pb1/3MnO3外延膜

PHOTOLUMINESCENCE STUDY OF EPITAXIAL CdTe/GaAs GROWN BY MBE

MBECdTe/GaAs光致发光研究

MBE Growth of High 2-DEG Sheet Density InP Based PHEMT Epitaxial Materials

MBE生长高2-DEG面密度InP基PHEMT外延材料

The Choice of Growth Technology for HgCdTe Epitaxial Growth by MOCVD

MOCVD外延碲镉汞薄膜的生长工艺选择

N/N~+ Epitaxial Slice of Silicon for MOS

MOS用(100)N/N~+硅外延片

The measurements of XRD, SEM and XPS show that the as- grown BNN film is epitaxial single crystal with smooth surface.

X射线衍射，扫描电子显微镜，X射线光电子能借测量表明生长的BNN膜是外延单晶膜。

epitaxial growth mesa process

[电] 晶膜增长过程

epitaxial growth mesa transistor

[电] 晶膜增高台晶体管

silicon ifffused epitaxial mesa transistor

[电] 硅扩散晶膜凸型电晶体

epitaxial diffuaed-junction transistor

[电] 磊晶扩散接面式电晶体

Z. Zhang and W. Geng, "Direct observation of misfit dislocations at the interface between a decagonal quasicrystal and its epitaxial crystalline layers", Phil. Mag. Lett., 65 (1992) 211-218.

“十面体准晶与其表面晶体之间界面失配位错的直接观察”,<哲学杂志>,(英国).

P-type field effect transistor includes a second N-type buried layer and the said P-type epitaxial layer formed in the P-type substrate.

一P型场效晶体管包括有一置于该P型衬底内的一第二N型嵌入层与该P型外延层。

A complication is that the films are strained and epitaxial, with hardly any defects.

一个复杂因素是薄膜为应变和单晶的，几乎没有任何缺陷。

THE CATALYTIC OXIDATION OF CO ON EPITAXIAL Pd (111) FILM

一氧化碳在外延薄膜Pd(111)表面的催化氧化

An improved method for measuring the thickness and concentration of epitaxial layer

一种测量外延层厚度及掺杂浓度的改进方法

The combination of polarized surface plasmon coupling and polarized emissions in a- and m-plane epitaxial structures can lead to more effective manipulation of LED output polarization.

为了上述研究，我们结合了六位不同专长之教授共同努力，也和国内外共六个研究团队合作。

It was also found that we could enhance the LED output power by using lateral epitaxial patterned sapphire (LEPS).

也发现藉由条状蓝宝石基板横向磊晶法(LEPS)，可以提升发光二极体的输出功率。

The applications of the photoassisted epitaxy in the epitaxial growth of semiconductors are introduced,such as temperature decrease,doping control,atomic layer epitaxy and the selective epitaxy.

介绍其在半导体材料外延生长中的具体应用，包括降低温度、掺杂控制、原子层外延和选择性外延；

From the point of view of industrial chain, value of epitaxial wafer accounts for 70% of the total.

从产业价值链的情况看，外延片的生长要占到70%的价值。

The ALE-MBE technology was used to get better film quality and to control exactly the thickness of epitaxial layers for quantum dots growth.

以原子层-分子束方法磊晶(ALE-MBE)成长锑化镓，可成长出较高的薄膜品质，同时可准确的控制量子点的成长厚度。

Taking the epitaxial garnet film for an example, the techniques ofX-ray difftaction topography and its applications in gemmological investigation and identification are introduced in this paper.

以金刚石、镀膜石榴石为例，介绍X射线貌相的各种技术及其在宝石学研究与鉴定中的应用。

It was found that the melting point of the nanoparticles with incoherent interfaces was depressed;but those with epitaxial interfaces are much superheated.

但与基体具有取向关系的纳米粒子的熔化温度超过其平衡熔点，表现为过热。

But in some key procedures, especially epitaxial wafer, there is still great gap compared with international first class level.

但是在关键环节，尤其是外延片的生长环节，与世界一流水平还有较大的差距。

low pressure epitaxial growth

低压外延生长

low-pressure silicon epitaxial technique

低压硅外延生长技术

epitaxial lateral overgrowth

侧向外延

High Quality GaN Grown by Epitaxial Lateral Overgrowth Technique and Epitaxial Defects Observation

侧向外延法生长的高质量GaN及其外延缺陷的观察

Photoelectron diffraction (PD) is a new developed method for investigating such characteristics of epitaxial or adsorptional surface as atomic site, structure, chemical bond, magnetism and so on.

光电子衍射是近年来发展成熟的研究外延表面和吸附表面的原子位型、结构、化学键、磁性等物理化学性质的表面分析方法。

coherent and epitaxial growth

共格外延生长

Groves or scratches effect and Epitaxial effect are two basic theory about the mach-nism of alignment of liquid crystal materials on the rubbed polymer surface.

关于液晶在摩擦聚合物表面排列取向的机理,有两种基本的解释:一是认为摩擦产生的沟痕起着重要作用,根据自由能最小原理,液晶分子沿着摩擦方向排列。

The epitaxial relationship between Er2O3 and Si(111) is Er2O3(111) // Si(111), Er2O3[110] // Si[110].

其在Si（111）衬底上的外延关系为Er2O3（111）//Si（111），Er2O3[110] // Si[110]。

Reduced pressure vapor phase epitaxial growth system

减压汽相磊晶生长系统

molecular beam epitaxial growth

分子束外延生长

Molecular beam epitaxy (MBE) is an ultra-high-vacuum (UHV)-based technique for producing high quality epitaxial structures with monolayer (ML) control.

分子束外延（Molecular beam epitaxy, MBE）是一种在超高真空条件下，使分子或原子按晶体排列一层层地“长”在基片上形成薄膜的技术。

discrete planar epitaxial device

分立平面外延器件

discrete passivated epitaxial transistor

分立钝化外延晶体管

Monte Carlo Simulation of Epitaxial Growth on Semiconductor Film Material

半导体薄膜材料外延生长的蒙特卡罗模拟

The surface smoothness of the single crystal substrate will be the most important factor, which influences the quality of the epitaxial film growth.

单晶基片的表面光洁度指标是影响后续薄膜生长质量的重要因素。

horizontal epitaxial furnace

卧式外延炉

ATOMIC SCALE CONTROLLED EPITAXIAL GROWTH AND CHARATERIZATION INVESTIGATION ON PEROVSKITE OXIDE HETEROJUNCTIONS

原子尺度控制钙钛矿氧化物薄膜的异质外延生长和特性研究

dual epitaxial isolation technique

双外延隔离技术

double epitaxial IC transistor

双外延集成电路晶体管

double diffused epitaxial mesa transisto

双扩散型外延台式晶体管

double diffusion epitaxial plane

双扩散外延平面

Multiscale Modeling in Epitaxial Growth

取向附生增长中的多种标度建模

Enhanced growth of low-resistivity self-aligned CoSi2, C54-TiSi2, and NiSi on epitaxial Si0.7Ge0.3 has been achieved with an interposing amorphous Si (a-Si) layer.

另一方面，在金属与矽锗合金之间夹一层适当厚度的非晶质矽当作反应消耗层亦可生成优质的低电阻率金属矽化物。

Meanwhile, the increase of liquid content also can promote both epitaxial growth of template and formation of textures.

同时液相含量的增加还有利于模板的外延生长以及织构组织的形成；

The four-point probe method is used on very thin samples such as epitaxial wafers and conductive coatings.

四探针法用在非常薄的样品，例如外延晶圆片和导电涂层上。

Patterned Epitaxial Technology

图案取向附生技术

Epitaxial layers of InSb and InAs_xSb_(1-x)on(111)InSb and (100)GaAs substrate have been grown by MBE technique.

在(111)InSb 和(100)GaAs 衬底上,用分子束外延技术生长了 InSb 和 InAs_xSb_(1-x)外延层。

There are three proce dures in LED production, namely epitaxial wafer, tube core and encapsulation.

在LED生产过程中，主要有外延片生长、芯片和封装三个环节。

Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate.

在半导体器件制造的外延工艺中，外延生长时通常要掺入杂质。

High quality GaN is grown by epitaxial lateral overgrowth(ELO) technique on SiO_(2~)-patterned GaN "template".

在有条状SiO2 图形的GaN“模板”上,侧向外延方法生长了高质量的GaN。

10Gb/s EML Module Based on Identical Epitaxial Layer Scheme

基于同一外延层结构的10Gb/s单片集成光发射模块(英文)

Both the effects of oxygen pressure and growth temperature on epitaxial growth of Er2O3 on Si(001) substrates are discussed based on the possible chemical reactions.

基于生长过程中可能的化学反应，我们对衬底温度和氧气分压给Er2O3单晶薄膜生长造成的影响也进行了系统的研究。

THE PHOTOGRAPHIC PROPERTY OF THE EPITAXIAL AgCl/AgBr EMULSION

外延AgCl/AgBr乳剂感光性能的研究

epitaxial p-n junction diode

外延p-n结二极管

epitaxial semiconductor laser

外延半导体激光器

germnium epitaxial mesa transistor

外延台面型锗晶体管

epitaxial mesa phototransistor

外延台面式光电晶体管

epitaxial polycrystalline film

外延多晶膜

epitaxial diffused mesa transistor

外延扩散台面晶体管

epitaxial diffused phototransistor

外延扩散型光电二极管

epitaxial diffused base transistor

外延扩散基晶体管

epitaxial diffued bae tranistor

外延扩散基极晶体管

epitaxial diffused junction transistor

外延扩散平面晶体管

epitaxial diffued junction transistor

外延扩散结晶体管

epitaxial rowth mesa tranistor

外延生长台面型晶体管